2N DC Current Gain. *hFE. IC=mA, VCE=10V. 30 – IC=10mA, VCE= . It is recommended that you completely review our Data Sheet(s) so as to. 2N datasheet, 2N circuit, 2N data sheet: MICRO-ELECTRONICS – NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES,alldatasheet. 2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics.

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R – T R ansistor selection criteria for avalanche. For a pockels driver requiring something in the order of a 3. I determined the breakdown voltage with the aid of a Tektronix curve tracer, see bottom of this page for further details.

I found paper [A22] only after writing all of this up. I intend to run more tests and measurements based on this paper.

2N3020 Datasheet, Equivalent, Cross Reference Search

TO is aka SOT54; manufacturer known only where stated abbreviations: Transistor selection – best transistor types for avalanche. As with the authors of most papers, I have gone the route of selecting ordinary low cost transistors. Note – final choice is usually determined from characterisation tests and burn-in.

I assume the reason for suggesting older devices are better, into which I read: A base layer in the surface of the epitaxial layer is of thickness about one-fourth the thickness of the epitaxial layer. An emitter layer in the base layer is of thickness about six-tenths the thickness of the base layer.


Larkin, Highland Technology Inc. Older diffused-junction types sometimes do. The Zetexes are made in Russia, presumably on an old fab line. Williams, 9 October Fast and RF transistors tend to work as well. Unfortunately, like datsaheet earlier transistors, the edge of the collector-base junction was exposed, making it sensitive to leakage through surface contaminants, thus requiring hermetic seals or passivation to prevent degradation of the transistor’s characteristics over time.

Makers of the Microchip: A Documentary History of Fairchild Semiconductor. Vcbo being close to Vceo’ http: All papers referencing this transistor typically originated from his research. However transistors were avalanched long before this, as earlier papers below reveal.

Also contains many other topics of interest http: Appendix B – Subnanosecond rise time pulse generators for the rich and poor. Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September Instrum Vol 64, No. Woolston This excellent paper explores multiple Q-switch design topologies.


Kuthi, USA Sept Potential source of low cost Datwsheet avalanche transistors: Asian sources of cheap Zetex avalanche transistors pedigree unknown. Note – I have not bought from this source. Stability on all types has been improved by power burn-in. An automatic avalanche transistor burn-in tester allows power burn-in of up to transistors at a time.


Data are collected from each run and stored. Data runs were typically 3 to 4 months long, with readings taken weekly. Motorola, Zetex and National transistors were operated at microamperes pA [sic], and the Raytheon units were operated at 20 pA.

The electric field causes migration of material in the high field region at the surface near the collector-base junction, creating the voltage instability. Selection of avalanche transistors for the LHC Project. Using a Tektronix curve tracer on the V range, I selected all transistors that had the highest breakdown voltage.

Of the three transistors selected in paper A7, only the 2N is readily available in High current handling 5. Frequency at least MHz 7. Vcbo as high as possible fewer devices: Pinout best suited for low C, L Vcbo close to Vceo Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September http: